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| resonantsoft-switchingseries reverseconductingigbtwithmonolithicbodydiodeforsoft-switching IHW15N120E1 datasheet industrialpowercontrol
2 IHW15N120E1 resonantsoft-switchingseries rev.2.1,2016-07-29 reverseconductingigbtwithmonolithicbodydiode features: ?powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly ?trenchstop tm technologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowv cesat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinv cesat ?lowemi ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?inductivecooking ?inverterizedmicrowaveovens ?resonantconverters ?softswitchingapplications keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IHW15N120E1 1200v 15a 1.5v 150c h15me1 pg-to247-3 g c e g c e 3 IHW15N120E1 resonantsoft-switchingseries rev.2.1,2016-07-29 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 g c e g c e 4 IHW15N120E1 resonantsoft-switchingseries rev.2.1,2016-07-29 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 1200 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 30.0 15.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 45.0 a turnoffsafeoperatingarea v ce 1200v, t vj 150c 1) - 45.0 a diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 30.0 15.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 45.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s,d<0.010) v ge 20 25 v powerdissipation t c =25c powerdissipation t c =100c p tot 156.0 62.2 w operating junction temperature t vj -40...+150 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance value min. typ. max. parameter symbol conditions unit r th characteristics igbt thermal resistance, junction - case r th(j-c) - - 0.80 k/w diode thermal resistance, junction - case r th(j-c) - - 0.80 k/w thermal resistance junction - ambient r th(j-a) - - 40 k/w 1) dv/dt < 1kv/s g c e g c e , + : 1 ( 5 h v r q d q w 6 r i w 6 z l w f k l q j 6 h u l h v 5 h y ( o h f w u l f d o & k d u d f w h u l v w l f d w 7 y m ? & x q o h v v r w k h u z l v h v s h f l i l h g 9 d o x h p l q w \ s p d [ 3 d u d p h w h u 6 \ p e r o & r q g l w l r q v 8 q l w 6 w d w l f & k d u d f w h u l v w l f $ p m m f d u p s f n j u u f s c s f b l e p x o w p m u b h f 9 % 5 & ( 6 9 * ( 9 , & p $ 7 $ p m m f d u p s f n j u u f s t b u v s b u j p o w p m u b h f 9 & ( v d w 9 * ( 9 , & $ 7 y m ? & 7 y m ? & 7 y m ? & 7 % j p e f g p s x b s e w p m u b h f 9 ) 9 * ( 9 , ) $ 7 y m ? & 7 y m ? & 7 y m ? & 7 ( b u f f n j u u f s u i s f t i p m e w p m u b h f 9 * ( w k , & p $ 9 & ( 9 * ( 7 ; f s p h b u f w p m u b h f d p m m f d u p s d v s s f o u , & ( 6 9 & ( 9 9 * ( 9 7 y m ? & 7 y m ? & ? " ( b u f f n j u u f s m f b l b h f d v s s f o u , * ( 6 9 & ( 9 9 * ( 9 o " 5 s b o t d p o e v d u b o d f j i v 9 & ( 9 , & $ 4 * o u f h s b u f e h b u f s f t j t u p s u * w ( o h f w u l f d o & k d u d f w h u l v w l f d w 7 y m ? & x q o h v v r w k h u z l v h v s h f l i l h g 9 d o x h p l q w \ s p d [ 3 d u d p h w h u 6 \ p e r o & r q g l w l r q v 8 q l w ' \ q d p l f & k d u d f w h u l v w l f * o q v u d b q b d j u b o d f & l h v 0 v u q v u d b q b d j u b o d f & r h v 3 f w f s t f u s b o t g f s d b q b d j u b o d f & u h v 9 & ( 9 9 * ( 9 i 0 + ] q ' ( b u f d i b s h f 4 * 9 & & 9 , & $ 9 * ( 9 o $ * o u f s o b m f n j u u f s j o e v d u b o d f n f b t v s f e n n j o g s p n d b t f / ( o ) 6 z l w f k l q j & k d u d f w h u l v w l f , q g x f w l y h / r d g 9 d o x h p l q w \ s p d [ 3 d u d p h w h u 6 \ p e r o & r q g l w l r q v 8 q l w , * % 7 & k d u d f w h u l v w l f d w 7 y m ? & 5 v s o p g g e f m b z u j n f w g r i i o t ' b m m u j n f w i o t 7 y m ? & 9 & & 9 , & $ 9 * ( 9 5 * r ff f ff , + : 1 ( 5 h v r q d q w 6 r i w 6 z l w f k l q j 6 h u l h v 5 h y 5 v s o p g g e f m b z u j n f w g r i i o t ' b m m u j n f w i o t 7 y m ? & 9 & & 9 , & $ 9 * ( 9 5 * r i i w & o f s h z m p t t f t j o d m v e f m u b j m n b d d p s e j o h ' j h v s f # 5 f t u d j s d v j u ) l j x u h ( & u q ) 5 v s o p g g f o f s h z t p g u t x j u d i j o h ( r i i g y g w 9 ? v n + 6 z l w f k l q j & k d u d f w h u l v w l f , q g x f w l y h / r d g 9 d o x h p l q w \ s p d [ 3 d u d p h w h u 6 \ p e r o & r q g l w l r q v 8 q l w , * % 7 & k d u d f w h u l v w l f d w t t v v i v v v t v v i v v v 7 IHW15N120E1 resonantsoft-switchingseries rev.2.1,2016-07-29 figure 1. powerdissipationasafunctionofcase temperature ( t vj 150c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 figure 2. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 150c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 figure 3. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 25 30 35 40 45 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 4. typicaloutputcharacteristic ( t vj =150c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 25 30 35 40 45 v ge =20v 17v 15v 13v 11v 9v 7v 5v g c e g c e 8 IHW15N120E1 resonantsoft-switchingseries rev.2.1,2016-07-29 figure 5. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 4 5 6 7 8 9 10 11 12 0 5 10 15 20 25 30 35 40 45 t vj =25c t vj =150c figure 6. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i c =7.5a i c =15a i c =30a figure 7. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =150c, v ge =0/18v, r g =10.2 w ,dynamictestcircuitinfiguree) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 10 20 30 40 50 10 100 1000 1e+4 t d(off) t f figure 8. typicalswitchingtimesasafunctionofgate resistance (inductiveload, t vj =150c, v ge =0/18v, i c =15a,dynamictestcircuitinfiguree) r g ,gateresistor[ w ] t ,switchingtimes[ns] 0 10 20 30 40 50 10 100 1000 1e+4 t d(off) t f g c e g c e 9 IHW15N120E1 resonantsoft-switchingseries rev.2.1,2016-07-29 figure 9. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ge =0/18v, i c =15a, r g =10.2 w ,dynamictestcircuitinfiguree) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 10 100 1000 1e+4 t d(off) t f figure 10. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.5ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 typ. figure 11. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, v ge =0/18v, r g =10.2 w , dynamic test circuit in figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 10 20 30 40 50 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 e off , t vj = 25c e off , t vj = 100c e off , t vj = 150c figure 12. typicalswitchingenergylossesasa functionofgateresistance (inductiveload, t vj =150c, v ge =0/18v, i c =15a,dynamictestcircuitinfiguree) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 0 10 20 30 40 50 0.04 0.05 0.06 0.07 0.08 0.09 0.10 e off g c e g c e 10 IHW15N120E1 resonantsoft-switchingseries rev.2.1,2016-07-29 figure 13. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ge =0/18v, i c =15a, r g =10.2 w ,dynamictestcircuitinfiguree) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 e off , 15a e off , 30a e off , 45a figure 14. typicalgatecharge ( i c =15a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 20 40 60 80 100 0 2 4 6 8 10 12 14 16 v cc =240v v cc =960v figure 15. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 10 100 1000 c ies c oes c res figure 16. igbt/diodetransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 single pulse g c e g c e 11 IHW15N120E1 resonantsoft-switchingseries rev.2.1,2016-07-29 figure 17. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 25 30 35 40 45 t vj =25c t vj =150c figure 18. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i f =7.5a i f =15a i f =30a g c e g c e 12 IHW15N120E1 resonantsoft-switchingseries rev.2.1,2016-07-29 g c e package drawing pg-to247-3 g c e 13 IHW15N120E1 resonantsoft-switchingseries rev.2.1,2016-07-29 g c e package drawing pg-to247-3 t v ge (t) t 1 e t t v i t off = x x d 1 2 ce c cc figure a. figure b. figure c. typical switching behavior in resonant application s figure e. dynamic test circuit figure d. i (t) c resonant capacitor, damping resistor, r ? ? v (t) ce v ge (t) i (t) v (t) ce testing conditions t d(off) t f 2 % i c t 90% v ge t t 0 % i c 1 % i c t 90% v ge t t t 2 t i,v v ge i c e v c e c r r g c e 14 IHW15N120E1 resonantsoft-switchingseries rev.2.1,2016-07-29 revisionhistory IHW15N120E1 revision:2016-07-29,rev.2.1 previous revision revision date subjects (major changes since last revision) 1.1 2016-07-21 preliminary data sheet 2.1 2016-07-29 final data sheet publishedby infineontechnologiesag 81726mnchen,germany ?infineontechnologiesag2016. allrightsreserved. importantnotice theinformationgiveninthisdocumentshallin noevent beregardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie).withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,infineontechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseof theproductofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityof customerstechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest infineontechnologiesoffice(www.infineon.com). pleasenotethatthisproductis not qualifiedaccordingtotheaecq100oraecq101documentsoftheautomotive electronicscouncil. warnings duetotechnicalrequirementsproductsmaycontaindangeroussubstances.forinformationonthetypesinquestion pleasecontactyournearestinfineontechnologiesoffice. exceptasotherwiseexplicitlyapprovedbyinfineontechnologiesinawrittendocumentsignedbyauthorized representativesofinfineontechnologies,infineontechnologiesproductsmay not beusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury. g c e package drawing pg-to247-3 t v ge (t) t 1 e t t v i t off = x x d 1 2 ce c cc figure a. figure b. figure c. typical switching behavior in resonant application s figure e. dynamic test circuit figure d. i (t) c resonant capacitor, damping resistor, r ? ? v (t) ce v ge (t) i (t) v (t) ce testing conditions t d(off) t f 2 % i c t 90% v ge t t 0 % i c 1 % i c t 90% v ge t t t 2 t i,v v ge i c e v c e c r r g c e |
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